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參數資料
| 型號： | 934041650118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設及接口 |
| 英文描述： | 6 A BUF OR INV BASED PRPHL DRVR, PSSO4 |
| 封裝： | PLASTIC, SOT-426, D2PAK-5 |
| 文件頁數： | 2/15頁 |
| 文件大小： | 156K |
| 代理商： | 934041650118 |
Philips Semiconductors
Product specification
TOPFET high side switch
BUK205-50Y
SMD version of BUK201-50Y
Fig.28. Typical negative load clamping voltage.
V
LG = f(Tj); parameter IL; condition VIG = 0 V.
Fig.29. Typical battery to load clamping voltage.
V
BL = f(Tj); parameter IL; condition IG = 5 mA.
Fig.30. Typical reverse battery characteristic.
I
G = f(VBG); conditions IL = 0 A, Tj = 25 C
Fig.31. Typical reverse diode characteristic.
I
L = f(VBL); conditions VIG = 0 V, Tj = 25 C
Fig.32. Typical output capacitance. T
mb = 25 C
C
bl = f(VBL); conditions f = 1 MHz, VIG = 0 V
Fig.33. Typical overload characteristic, T
mb = 25 C.
I
L = f(VBL); condition VBG = 13 V; parameter tp
-60
-20
20
60
100
140
180
Tj / C
VLG / V
BUK205-50Y
-22
-20
-18
-16
-14
-12
-10
7.5 A
1 mA
IL =
tp = 300 us
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
-40
-30
-20
-10
0
BUK205-50Y
VLB / V
IL / A
-60
-20
20
60
100
140
180
Tj / C
VBL / V
BUK205-50Y
65
60
55
50
100 uA
1 mA
4 A
IL =
tp = 300 us
0
1020
304050
100 pF
1 nF
10 nF
BUK205-50Y
VBL / V
Cbl
-20
-10
0
VBG / V
IG / mA
BUK205-50Y
0
-50
-100
-150
-15
-5
0
5
10
15
20
25
0
10
20
30
40
50
60
BUK205-50Y
VBL / V
IL / A
VBL(TO) typ.
tp =
300 us
current limiting
i.e. before short
circuit load trip
50 us
July 1996
10
Rev 1.000
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