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參數(shù)資料
| 型號(hào)： | 934041420115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT5, S-MINI PACKAGE-5 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 102K |
| 代理商： | 934041420115 |
1997 Sep 10
2
Philips Semiconductors
Product specication
NPN wideband cascode transistor
BFC520
FEATURES
Small size
High power gain at low bias current and high
frequencies
High reverse isolation
Low noise figure
Gold metallization ensures excellent reliability
Minimum operating voltage VC2E1 =1V.
APPLICATIONS
Low noise, high gain amplifiers
Oscillator buffer amplifiers
Wideband voltage-to-current converters.
DESCRIPTION
Cascode amplifier with two discrete dies in a surface
mount, 5-pin SOT353 (S-mini) package. The amplifier is
primarily intended for low power RF communications
equipment, such as pagers and cordless phones and has
a very low feedback capacitance resulting in high isolation.
PINNING - SOT353
SYMBOL
PIN
DESCRIPTION
b2
1
base 2
e1
2
emitter 1
b1
3
base 1
c1/e2
4
collector 1/emitter 2
c2
5
collector 2
Fig.1 Simplified outline and symbol.
handbook, halfpage
3
1
4
5
2
Top view
MAM212
c2
b2
c1/e2
b1
e1
QUICK REFERENCE DATA
VC2E1 = 3 V; IC = 20 mA; VB2 = 2.1 V; b2 connected to ground via 1 nF (0603) capacitor, e1 connected directly to
ground.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Cre
feedback capacitance CB1C2
10
fF
maximum isolation
f = 900 MHz; Tamb =25 °C
63
dB
f = 2 GHz; Tamb =25 °C
38
dB
MSG
maximum stable power gain
(narrowband)
f = 900 MHz; Tamb =25 °C
31
dB
f = 2 GHz; Tamb =25 °C
19
dB
F
noise gure
IC = 5 mA; f = 900 MHz; ΓS = Γopt
1.3
1.6
dB
Rth j-s
thermal resistance from
junction to soldering point
single loaded
230
K/W
double loaded
115
K/W
s
21 s12
2
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