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參數(shù)資料
| 型號： | 934041410115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT6, S-MINI PACKAGE-6 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 96K |
| 代理商： | 934041410115 |
1996 Oct 08
4
Philips Semiconductors
Product specication
Dual NPN wideband transistor
BFM520
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. GUM is the maximum unilateral power gain, assuming s12 is zero.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics of any single transistor
V(BR)CBO
collector-base breakdown voltage
IC = 2.5 A; IE =0
20
V
V(BR)CEO
collector-emitter breakdown voltage IC =10 A; IB =0
8
V
V(BR)EBO
emitter-base breakdown voltage
IE = 2.5 A; IC = 0
2.5
V
ICBO
collector-base leakage current
VCB =6V; IE =0
50
nA
hFE
DC current gain
IC = 20 mA; VCE = 6 V
60
120
250
DC characteristics of the dual transistor
hFE
ratio of highest and lowest DC
current gain
IC1 =IC2 =20mA;
VCE1 =VCE2 =6V
1
1.2
V
BEO
difference between highest and
lowest base-emitter voltage
(offset voltage)
IE1 =IE2 = 30 mA; Tamb =25 °C0
1
mV
AC characteristics of any single transistor
fT
transition frequency
IC = 20 mA; VCE =3V; f=1GHz
9
GHz
Cc
collector capacitance
IE =ie = 0; VCB = 3 V; f = 1 MHz
0.5
pF
Cre
feedback capacitance
IC = 0; VCB = 3 V; f = 1 MHz
0.4
pF
GUM
maximum unilateral power gain;
note 1
IC = 20 mA; VCE =3V;
Tamb =25 °C; f = 900 MHz
15
dB
IC = 20 mA; VCE =3V;
Tamb =25 °C; f = 2 GHz
9
dB
insertion power gain
IC = 20 mA; VCE =3V;
f = 900 MHz; Tamb =25 °C
13
14.5
dB
F
noise gure
IC = 5 mA; VCE =3V;
f = 900 MHz;
ΓS = Γopt
1.2
1.6
dB
IC = 20 mA; VCE =3V;
f = 900 MHz;
ΓS = Γopt
1.7
2.1
dB
IC = 5 mA; VCE =3V;
f = 2 GHz;
ΓS = Γopt
1.9
dB
s
21
2
G
UM
10
s
21
2
1s
11
2
–
() 1s
22
2
–
()
------------------------------------------------------------ dB
log
=
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