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參數(shù)資料
| 型號(hào)： | 934041400115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT6, S-MINI PACKAGE-6 |
| 文件頁數(shù)： | 9/10頁 |
| 文件大?。?/td> | 92K |
| 代理商： | 934041400115 |
1996 Oct 08
8
Philips Semiconductors
Product specication
Dual NPN wideband transistor
BFM505
APPLICATION INFORMATION
SPICE parameters for any single BFM505 die
Note
1. These parameters have not been extracted,
the default values are shown.
SEQUENCE No.
PARAMETER
VALUE
UNIT
1
IS
134.1
aA
2
BF
180.0
3
NF
0.988
4
VAF
38.34
V
5
IKF
150.0
mA
6
ISE
27.81
fA
7
NE
2.051
8
BR
55.19
9
NR
0.982
10
VAR
2.459
V
11
IKR
2.920
mA
12
ISC
17.45
aA
13
NC
1.062
14
RB
20.00
15
IRB
1.000
A
16
RBM
20.00
17
RE
1.171
18
RC
4.350
19(1)
XTB
0.000
20(1)
EG
1.110
eV
21(1)
XTI
3.000
22
CJE
284.7
fF
23
VJE
600.0
mV
24
MJE
0.303
25
TF
7.037
ps
26
XTF
12.34
27
VTF
1.701
V
28
ITF
30.64
mA
29
PTF
0.000
deg
30
CJC
242.4
fF
31
VJC
188.6
mV
32
MJC
0.041
33
XCJC
0.130
34
TR
1.332
ns
35(1)
CJS
0.000
F
36(1)
VJS
750.0
mV
37(1)
MJS
0.000
38
FC
0.897
Fig.14 Package equivalent circuit SOT363A
(inductance only).
handbook, halfpage
B1
B2
C1
C2
LB
E1
E2
MBG188
LP
T1
T2
LE
Fig.15 Package capacitance (fF) between
indicated nodes.
3
E2
E1
B2
C2
C1
27
6
1
0.4
0.6
1.0
LP
Lead inductances (nH)
LB
LE
27
3
17
36
3
48
B1
E2
E1
B2
C2
48
36
17
3
MBG189
6
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