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參數資料
| 型號： | 934038980115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-243AA |
| 封裝： | PLASTIC, MPT3, SC-62, UPAK-3 |
| 文件頁數： | 4/8頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 934038980115 |
2000 May 23
4
Philips Semiconductors
Product specication
NPN wideband transistor
BFQ540
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Notes
1. dim = 60 dB (DIN45004B); VCE = 8 V; IC = 40 mA; RL =50 ;
Vp =Vo; Vq =Vo 6 dB; Vr =Vo 6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.5 MHz;
measured at fp +fq fr = 793.25 MHz.
2. dim = 60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; RL =50 ;
Vp =Vq =Vo; fp = 806 MHz; fq = 810 MHz;
measured at 2fp fq = 802 MHz.
3. IC = 40 mA; VCE = 8 V; RL =50 ;
Vp =Vq = 225 mV; fp = 250 MHz; fq = 560 MHz;
measured at fp +fq = 810 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC =10 A; IE =0
20
V
V(BR)CES
collector-emitter breakdown voltage RBE = 0; IC =40 A15
V
V(BR)EBO
emitter-base breakdown voltage
IE = 100 A; IC =0
2
V
ICBO
collector-base leakage current
VCB =8V; IE =0
50
nA
IEBO
emitter-base leakage current
VCB =1V; IC =0
200
nA
hFE
DC current gain
IC = 40 mA; VCE = 8 V
100
120
250
fT
transition frequency
IC = 40 mA; VCE =8V;
fm = 1 GHz
9
GHz
Ce
emitter capacitance
IC =ie = 0; VEB = 0.5 V; f = 1 MHz
2
pF
Cre
feedback capacitance
IC = 0; VCE =8V; f=1MHz
0.9
pF
insertion power gain
IC = 40 mA; VCE =8V;
f = 900 MHz; Tamb =25 °C
12
13
dB
Vo
output voltage
note 1
500
mV
note 2
350
mV
d2
second order intermodulation
distortion
note 3
53
dB
F
noise gure
IC = 40 mA; VCE =8V;
f = 900 MHz;
ΓS = Γopt
1.9
2.4
dB
s
21
2
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