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參數(shù)資料
| 型號： | 934033490118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2300 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 119K |
| 代理商： | 934033490118 |
1997 Jun 20
2
Philips Semiconductors
Product specication
Dual P-channel enhancement
mode MOS transistor
PHP225
FEATURES
High-speed switching
No secondary breakdown
Very low on-resistance.
APPLICATIONS
Motor and actuator driver
Power management
Synchronized rectification.
DESCRIPTION
Two P-channel enhancement mode MOS transistors in an
8-pin plastic SOT96-1 (SO8) package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT96-1 (SO8)
PIN
SYMBOL
DESCRIPTION
1s1
source 1
2g1
gate 1
3s2
source 2
4g2
gate 2
5d2
drain 2
6d2
drain 2
7d1
drain 1
8d1
drain 1
Fig.1 Simplified outline and symbol.
handbook, halfpage
d
MAM119
1
4
5
8
g
s
d
1
d
g
s
d
2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per P-channel
VDS
drain-source voltage (DC)
30
V
VSD
source-drain diode forward voltage
IS = 1.25 A
1.6
V
VGSO
gate-source voltage (DC)
open drain
±20
V
VGSth
gate-source threshold voltage
ID = 1 mA; VDS =VGS
1
2.8
V
ID
drain current (DC)
2.3
A
RDSon
drain-source on-state resistance
ID = 1 A; VGS = 10 V
0.25
Ptot
total power dissipation
Ts =80 °C
2W
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