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參數(shù)資料
| 型號： | 934032460115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 110K |
| 代理商： | 934032460115 |
1998 Oct 15
3
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
15
V
VEBO
emitter-base voltage
open collector
3V
IC
collector current (DC)
200
mA
Ptot
total power dissipation
Ts ≤ 85 °C; see Fig.2; note 1
500
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
175
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
Ts ≤ 85 °C; note 1
180
K/W
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
400
0
MBG248
150
T
( C)
o
s
Ptot
(mW)
600
200
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