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參數(shù)資料
| 型號： | 934032310115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 14/16頁 |
| 文件大?。?/td> | 123K |
| 代理商： | 934032310115 |
2000 May 23
7
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFG540W
BFG540W/X; BFG540W/XR
Fig.11 Intermodulation distortion as a function of
collector current; typical values.
Vo = 500 mV; f(p+q r) = 793.25 MHz; VCE = 8 V; Tamb =25 °C;
RL =75 .
handbook, halfpage
10
60
20
70
60
50
40
30
20
30
40
dim
(dB)
IC (mA)
50
MEA973
Fig.12 Second order intermodulation distortion as
a function of collector current; typical
values.
Vo = 275 mV; f(p+q) = 810 MHz; VCE = 8 V; Tamb =25 °C;
RL =75 .
handbook, halfpage
10
60
20
70
60
50
40
30
20
30
40
d2
(dB)
IC (mA)
50
MEA972
Fig.13 Minimum noise figure as a function of
collector current; typical values.
VCE =8V.
handbook, halfpage
4
2
1
0
MLC049
3
F
(dB)
I
(mA)
C
f = 2000 MHz
1000 MHz
900 MHz
500 MHz
1
10
2
Fig.14 Associated available gain as a function of
collector current; typical values.
VCE =8V.
handbook, halfpage
5
0
1
2
5
0
5
10
Gass
(dB)
15
20
3
Fmin
(dB)
IC (mA)
4
MRA760
1
102
10
2000 MHz
1000 MHz
2000 MHz
1000 MHz
f = 900 MHz
Gass
Fmin
900 MHz
500 MHz
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