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參數(shù)資料
| 型號： | 934032210115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 73K |
| 代理商： | 934032210115 |
1996 Feb 06
5
Philips Semiconductors
Product specication
UHF power transistor
BLT70
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common emitter test circuit (see note 1 and Fig.7).
Note
1. Ts is the temperature at the soldering point of the collector pin.
Ruggedness in class-AB operation
The BLT70 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the
following conditions: f = 900 MHz; VCE = 6.5 V; PL = 0.5 W; Ts ≤ 60 °C.
MODE OF OPERATION
f
(MHz)
VCE
(V)
ICQ
(mA)
PL
(W)
Gp
(dB)
ηC
(%)
CW, class-AB
900
4.8
0.01
0.6
≥6
≥60
typ. 8.1
typ. 73
Fig.5
Power gain and collector efciency as
functions of load power; typical values.
f = 900 MHz; VCE = 4.8 V; ICQ = 0.01 mA; Ts ≤ 60 °C.
handbook, halfpage
0
1.0
10
Gp
(dB)
0
2
MGD200
4
6
8
0.2
0.4
0.6
0.8
PL (W)
100
ηC
(%)
ηC
80
20
40
0
60
Gp
Fig.6
Load power as a function of input
power; typical values.
f = 900 MHz; VCE = 4.8 V; ICQ = 0.01 mA; Ts ≤ 60 °C.
handbook, halfpage
0
100
PIN (mW)
200
1.0
PL
(W)
0
0.8
MGD201
0.6
0.4
0.2
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