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參數(shù)資料
| 型號(hào)： | 934032170235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.215 A, 85 V, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 52K |
| 代理商： | 934032170235 |
1999 May 26
2
Philips Semiconductors
Product specication
Low-leakage diode
BAS116
FEATURES
Plastic SMD package
Low leakage current: typ. 3 pA
Switching time: typ. 0.8 s
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
APPLICATION
Low leakage current applications in
surface mounted circuits.
DESCRIPTION
Epitaxial medium-speed switching
diode with a low leakage current in a
small SOT23 plastic SMD package.
PINNING
PIN
DESCRIPTION
1
anode
2
not connected
3
cathode
Fig.1 Simplified outline (SOT23) and symbol.
handbook, 4 columns
21
3
Top view
MAM106
2
n.c.
1
3
Marking code: JVp = made in Hong Kong; JVt = made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
85
V
VR
continuous reverse voltage
75
V
IF
continuous forward current
see Fig.2; note 1
215
mA
IFRM
repetitive peak forward current
500
mA
IFSM
non-repetitive peak forward current square wave; Tj =25 °C prior to surge;
see Fig.4
tp =1 s
4A
tp =1ms
1A
tp =1s
0.5
A
Ptot
total power dissipation
Tamb =25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
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