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參數(shù)資料
| 型號： | 934032040112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 934032040112 |
2001 Oct 31
3
Philips Semiconductors
Product specication
860 MHz, 15 dB gain push-pull amplier
BGY883
CHARACTERISTICS
Table 1
Bandwidth 40 to 860 MHz; VB = 24 V; Tcase =30 °C; ZS =ZL =75
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 805.25 MHz; Vq = 44 dBmV;
measured at fp +fq = 860.5 MHz.
2. Measured according to DIN45004B:
fp = 851.25 MHz; Vp =Vo;
fq = 858.25 MHz; Vq =Vo 6 dB;
fr = 860.25 MHz; Vr =Vo 6 dB;
measured at fp +fq fr = 849.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 50 MHz
14.5
15.5
dB
f = 860 MHz
15
dB
SL
slope cable equivalent
f = 40 to 860 MHz
0
2dB
FL
atness of frequency response
f = 40 to 860 MHz
±0.3
dB
s11
input return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
18.5
dB
f = 160 to 320 MHz
17
dB
f = 320 to 640 MHz
15.5
dB
f = 640 to 860 MHz
14
dB
s22
output return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
18.5
dB
f = 160 to 320 MHz
17
dB
f = 320 to 640 MHz
15.5
dB
f = 640 to 860 MHz
14
dB
s21
phase response
f = 50 MHz
45
+45
deg
CTB
composite triple beat
49 channels at; Vo = 44 dBmV;
measured at 859.25 MHz
61
dB
Xmod
cross modulation
49 channels at; Vo = 44 dBmV;
measured at 55.25 MHz
61
dB
CSO
composite second order
distortion
49 channels at; Vo = 44 dBmV;
measured at 860.5 MHz
61
dB
d2
second order distortion
note 1
68
dB
Vo
output voltage
dim = 60 dB; note 2
58.5
60
dBmV
F
noise gure
f = 50 MHz
6dB
f = 550 MHz
7dB
f = 650 MHz
7.5
dB
f = 750 MHz
8dB
f = 860 MHz
8.5
dB
Itot
total current consumption (DC)
note 3
235
mA
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