參數(shù)資料
型號(hào): 934031470115
廠(chǎng)商: NXP SEMICONDUCTORS
元件分類(lèi): 小信號(hào)晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: MICRO MINIATURE, PLASTIC, SMD, CMPAK-4
文件頁(yè)數(shù): 2/7頁(yè)
文件大小: 103K
代理商: 934031470115
1995 Apr 25
2
Philips Semiconductors
Preliminary specication
N-channel dual-gate MOS-FET
BF908WR
FEATURES
High forward transfer admittance
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
DESCRIPTION
Depletion type field effect transistor in a plastic
microminiature SOT343R package. The transistor is
protected against excessive input voltage surges by
integrated back-to-back diodes between gates and
source.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING
PIN
SYMBOL
DESCRIPTION
1
s, b
source
2
d
drain
3g2
gate 2
4g1
gate 1
Fig.1 Simplified outline (SOT343R) and symbol.
Marking code: MD.
MAM198
Top view
21
34
s,b
d
g
1
g
2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
12
V
ID
drain current
40
mA
Ptot
total power dissipation
300
mW
Tj
operating junction temperature
150
°C
yfs
forward transfer admittance
36
43
50
mS
Cig1-s
input capacitance at gate 1
2.4
3.1
4
pF
Crs
reverse transfer capacitance
f = 1 MHz
20
30
45
fF
F
noise gure
f = 800 MHz
1.5
2.5
dB
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