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參數(shù)資料
| 型號(hào)： | 934031450115 |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SMD, CMPAK-4 |
| 文件頁(yè)數(shù)： | 12/12頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | 934031450115 |
1997 Sep 05
9
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FET
BF998WR
VDD = 12 V; GS = 3.3 mS; GL = 1 mS.
L1 = L4 = 200 nH; 11 turns 0.5 mm copper wire, without spacing, internal diameter 3 mm.
L2 = 2 cm, silvered 0.8 mm copper wire, 4 mm above ground plane.
L3 = 2 cm, silvered 0.5 mm copper wire, 4 mm above ground plane.
Fig.16 Gain control test circuit at f = 800 MHz.
VAGC
1 nF
50
input
50
input
1 nF
270
k
360
1.8
k
140
k
100 k
VDD
1 nF
MGC480
VDD
1 nF
L1
L2
C1
2-18 pF
C2
0.5-3.5 pF
C3
0.5-3.5 pF
,,
L3
L4
C4
4-40 pF
,,
Fig.17 Automatic gain control characteristics
measured in circuit of Fig.15.
VDD = 12 V; f = 200 MHz; Tamb =25 °C.
010
0
50
40
MGC479
30
20
10
24
6
8
IDSS=
max
typ
min
G
tr
(dB)
VAGC(V)
VDD = 12 V; f = 800 MHz; Tamb =25 °C.
Fig.18 Automatic gain control characteristics
measured in circuit of Fig.16.
010
0
50
40
MGC478
30
20
10
24
6
8
IDSS=
max
typ
min
G
tr
(dB)
VAGC(V)
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