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參數(shù)資料
| 型號： | 934025520135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, VHF BAND, MIXER DIODE |
| 封裝： | CERAMIC, SMD, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 44K |
| 代理商： | 934025520135 |
2002 Jun 12
2
Philips Semiconductors
Product specication
Band-switching diode
BA792
FEATURES
Ceramic SMD package
Low diode capacitance:
max. 1.1 pF
Low diode forward resistance:
max. 0.7
.
APPLICATIONS
Low loss band-switching in VHF
television tuners
Surface mount high-speed
switching circuits.
DESCRIPTION
Planar, high performance band-switching diode in a SOD110 very small
ceramic SMD package.
handbook, 4 columns
MAM139
ka
cathode mark
top view
side view
bottom view
ak
Fig.1 Simplified outline (SOD110) and symbol.
Marking code: L8.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board measuring 11
× 25 × 1.6 mm.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VR
continuous reverse voltage
35
V
IF
continuous forward current
100
mA
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 100 mA
1.1
V
IR
reverse current
VR = 20 V
10
nA
VR = 20 V; Tamb =75 °C1
A
Cd
diode capacitance
VR = 3 V; f = 1 to 100 MHz; note 1
1.1
pF
rD
diode forward resistance
IF = 3 mA; f = 200 MHz; note 1
0.7
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
315
K/W
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