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參數(shù)資料
| 型號： | 934022720215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 74K |
| 代理商： | 934022720215 |
1995 Aug 31
4
Philips Semiconductors
Product specication
NPN 2 GHz RF power transistor
BFG10; BFG10/X
APPLICATION INFORMATION
RF performance at Tamb =25 °C in a common-emitter test circuit (see Fig.7).
Ruggedness in class-AB operation
The BFG10 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions up to a supply voltage of 7 V, f = 1.9 GHz and a duty cycle of 1 : 8.
MODE OF OPERATION
f
(GHz)
VCE
(V)
ICQ
(mA)
PL
(mW)
Gp
(dB)
ηc
(%)
Pulsed, class-AB, duty cycle: < 1 : 8
1.9
3.6
1
200
>5
>50
typ. 7
typ. 60
Pulsed, class-AB operation.
VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for PL = 200 mW.
Fig.4
Power gain and efficiency as functions
of load power; typical values.
handbook, halfpage
0
500
10
0
2
MLC820
4
6
8
100
0
20
40
60
80
100
200
300
400
G p
(dB)
P (mW)
L
c
(%)
η
c
η
Fig.5
Load power as a function of drive
power; typical values.
Pulsed, class-AB operation.
VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for PL = 200 mW.
handbook, halfpage
0
50
100
150
500
0
400
MLC821
300
200
100
P L
(mW)
P (mW)
D
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