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參數(shù)資料
| 型號： | 934022610215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SMD, SC-61B, 4 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 87K |
| 代理商： | 934022610215 |
1996 Jul 30
2
Philips Semiconductors
Product specication
Dual-gate MOS-FETs
BF908; BF908R
FEATURES
High forward transfer admittance
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
DESCRIPTION
Depletion type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
transistors are protected against excessive input voltage
surges by integrated back-to-back diodes between gates
and source.
PINNING
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PIN
SYMBOL
DESCRIPTION
1
s, b
source
2
d
drain
3g2
gate 2
4g1
gate 1
Fig.1
Simplified outline (SOT143) and
symbol; BF908.
handbook, halfpage
s,b
d
g
1
g
2
43
2
1
Top view
MAM039
Fig.2
Simplified outline (SOT143R) and
symbol; BF908R.
handbook, halfpage
s,b
d
g
1
g
2
MAM040
34
1
2
Top view
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
12
V
ID
drain current
40
mA
Ptot
total power dissipation
200
mW
Tj
operating junction temperature
150
°C
yfs
forward transfer admittance
36
43
50
mS
Cig1-s
input capacitance at gate 1
2.4
3.1
4
pF
Crs
reverse transfer capacitance
f = 1 MHz
20
30
45
pF
F
noise gure
f = 800 MHz
1.5
2.5
dB
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