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參數(shù)資料
| 型號(hào)： | 934022600215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 87K |
| 代理商： | 934022600215 |
1996 Jul 30
4
Philips Semiconductors
Product specication
Dual-gate MOS-FETs
BF908; BF908R
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
Tj =25 °C; unless otherwise specied.
DYNAMIC CHARACTERISTICS
Common source; Tamb =25 °C; VDS =8V; VG2-S =4V; ID = 15 mA; unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
BF908
500
K/W
BF908R
550
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
±V(BR)G1-SS gate 1-source breakdown voltage VG2-S =VDS = 0; IG1-S =10mA
8
20
V
±V(BR)G2-SS gate 2-source breakdown voltage VG1-S =VDS = 0; IG2-S =10mA
8
20
V
V(P)G1-S
gate 1-source cut-off voltage
VG2-S =4V; VDS =8V; ID =20 A
2V
V(P)G2-S
gate 2-source cut-off voltage
VG1-S =4V; VDS =8V; ID =20 A
1.5
V
IDSS
drain-source current
VG2-S =4V; VDS =8V; VG1-S = 0
3
1527mA
±IG1-SS
gate 1 cut-off current
VG2-S =VDS = 0; VG1-S =5V
50
nA
±IG2-SS
gate 2 cut-off current
VG1-S =VDS = 0; VG2-S =5V
50
nA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
y
fs
forward transfer admittance
pulsed; Tj =25 °C; f = 1 MHz
36
43
50
mS
Cig1-s
input capacitance at gate 1
f = 1 MHz
2.4
3.1
4
pF
Cig2-s
input capacitance at gate 2
f = 1 MHz
1.2
1.8
2.5
pF
Cos
output capacitance
f = 1 MHz
1.2
1.7
2.2
pF
Crs
reverse transfer capacitance
f = 1 MHz
20
30
45
fF
F
noise gure
f = 200 MHz; GS = 2 mS; BS =BSopt
0.6
1.2
dB
f = 800 MHz; GS =GSopt; BS =BSopt
1.5
2.5
dB
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