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參數(shù)資料
| 型號(hào)： | 934021700114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 5/14頁(yè) |
| 文件大?。?/td> | 397K |
| 代理商： | 934021700114 |
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Product Information
MX1011B200Y;
Microwave power
transistor
Information as of 2001-11-13
Stay informed
Download datasheet
Blockdiagram
Description
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base
connected to flange.
Features
Suitable for short and medium pulse applications up to 100 s pulse width, 10% duty factor
q
Diffused emitter ballasting resistors improve ruggedness
q
Interdigitated emitter-base structure provides high emitter efficiency
q
Gold metallization with barrier realizes very stable characteristics and excellent lifetime
q
Multicell geometry improves power sharing reduces thermal resistance
q
Internal input and output prematching networks allow an easier design of circuits.
q
Applications
Intended for use in common base class C broadband pulsed power amplifiers for IFF, TCAS and Mode S
applications in the 1030 MHz to 1090 MHz bandwidth. Also suitable for medium pulse, heavy duty operation
within the 1030 MHz to 1150 MHz bandwidth.
Datasheet
Page
count
File
size
(kB)
Datasheet
MX1011B200Y Microwave
power transistor
18-Feb-97
Product
Specification
12
74
PDF
File
Philips Semiconductors; MX1011B200Y; Microwave power transistor
file:///G|/imaging/BITTING/mail_pdf/cpl_rework/mx1011b200y.html (1 of 2) [1/9/2002 11:58:32 AM]
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