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參數(shù)資料
| 型號： | 934021680115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, MPT3, SMD, UPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 42K |
| 代理商： | 934021680115 |
1999 Apr 08
2
Philips Semiconductors
Product specication
PNP Darlington transistors
BCV28; BCV48
FEATURES
Very high DC current gain (min. 10000)
High current (max. 500 mA)
Low voltage (max. 60 V).
APPLICATIONS
Where very high amplification is required.
DESCRIPTION
PNP Darlington transistor in a SOT89 plastic package.
NPN complements: BCV29 and BCV49.
PINNING
PIN
DESCRIPTION
1
emitter
2
collector
3
base
Fig.1 Simplified outline (SOT89) and symbol.
handbook, halfpage
32
1
TR2
TR1
12
3
MAM301
Bottom view
MARKING
TYPE NUMBER
MARKING CODE
BCV28
ED
BCV48
EE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BCV28
40
V
BCV48
80
V
VCES
collector-emitter voltage
VBE =0
BCV28
30
V
BCV48
60
V
VEBO
emitter-base voltage
open collector
10
V
IC
collector current (DC)
500
mA
ICM
peak collector current
800
mA
IB
base current (DC)
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
1.3
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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