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參數(shù)資料
| 型號(hào)： | 934021490215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 100K |
| 代理商： | 934021490215 |
1996 Jul 29
3
Philips Semiconductors
Product specication
N-channel silicon junction
eld-effect transistors
BF556A; BF556B; BF556C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm2.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm2.
STATIC CHARACTERISTICS
Tj =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
±30
V
VGSO
gate-source voltage
open drain
30
V
VGDO
gate-drain voltage (DC)
open source
30
V
IG
forward gate current (DC)
10
mA
Ptot
total power dissipation
up to Tamb =25 °C; note 1
250
mW
Tstg
storage temperature
65
150
°C
Tj
operating junction temperature
150
°C
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient; note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)GSS
gate-source breakdown voltage IG = 1 A; VDS =0
30
V
VGSoff
gate-source cut-off voltage
ID = 200 A; VDS =15V
0.5
7.5
V
IDSS
drain current
VGS = 0; VDS =15V
BF556A
3
7mA
BF556B
6
13
mA
BF556C
11
18
mA
IGSS
gate leakage current
VGS = 20 V; VDS =0
0.5
5000
pA
yfs
forward transfer admittance
VGS = 0; VDS = 15 V
4.5
mS
yos
common source output
admittance
VGS = 0; VDS =15V
40
S
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