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參數(shù)資料
| 型號： | 934021370135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, SC-70, CMPAK-3 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 113K |
| 代理商： | 934021370135 |
September 1995
6
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFS505
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
Fig.6 Gain as a function of collector current.
VCE = 6 V; f = 900 MHz; Tamb =25 °C.
handbook, halfpage
MRC016
0
5
10
15
20
25
02468
MSG
GUM
gain
(dB)
IC (mA)
Fig.7 Gain as a function of collector current.
VCE = 6 V; f = 2 GHz; Tamb =25 °C.
handbook, halfpage
MRC017
0
5
10
15
20
02468
MSG
GUM
Gmax
gain
(dB)
IC (mA)
Fig.8 Gain as a function of frequency.
IC = 1.25 mA; VCE = 6 V; Tamb =25 °C.
handbook, halfpage
MRC015
0
10
20
30
40
50
102
101
110
f (GHz)
MSG
GUM
Gmax
gain
(dB)
Fig.9 Gain as a function of frequency.
IC = 5 mA; VCE = 6 V; Tamb =25 °C.
handbook, halfpage
MRC014
0
10
20
30
40
50
101
102
110
f (GHz)
MSG
GUM
Gmax
gain
(dB)
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