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參數(shù)資料
| 型號： | 934019220112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 934019220112 |
2002 Jan 23
5
Philips Semiconductors
Product specication
860 MHz, 18.5 dB gain power doubler amplier
BGD802
Table 3
Bandwidth 40 to 750 MHz; VB = 24 V; Tcase =30 °C; ZS =ZL =75
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 691.25 MHz; Vq = 44 dBmV;
measured at fp +fq = 746.5 MHz.
2. Measured according to DIN45004B:
fp = 740.25 MHz; Vp =Vo;
fq = 747.25 MHz; Vq =Vo 6 dB;
fr = 749.25 MHz; Vr =Vo 6 dB;
measured at fp +fq fr = 738.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 50 MHz
18
18.5
19
dB
f = 750 MHz
18.5
19.4
dB
SL
slope cable equivalent
f = 40 to 750 MHz
0.2
2dB
FL
atness of frequency response
f = 40 to 750 MHz
±0.5
dB
s11
input return losses
f = 40 to 80 MHz
20
35
dB
f = 80 to 160 MHz
18.5
31
dB
f = 160 to 320 MHz
17
27
dB
f = 320 to 640 MHz
15.5
22
dB
f = 640 to 750 MHz
14
20
dB
s22
output return losses
f = 40 to 80 MHz
20
29.5
dB
f = 80 to 160 MHz
18.5
29
dB
f = 160 to 320 MHz
17
25.5
dB
f = 320 to 640 MHz
15.5
23
dB
f = 640 to 750 MHz
14
22
dB
s21
phase response
f = 50 MHz
45
+45
deg
CTB
composite triple beat
110 channels at;
Vo = 44 dBmV;
measured at 745.25 MHz
60.5
58
dB
Xmod
cross modulation
110 channels at;
Vo = 44 dBmV;
measured at 55.25 MHz
62.5
60
dB
CSO
composite second order distortion 110 channels at;
Vo = 44 dBmV;
measured at 746.5 MHz
66
60
dB
d2
second order distortion
note 1
72
dB
Vo
output voltage
dim = 60 dB; note 2
64
dBmV
NF
noise gure
see Table 1
dB
Itot
total current consumption (DC)
note 3
395
410
mA
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