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參數(shù)資料
| 型號(hào)： | 934019200112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 1000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 934019200112 |
2001 Oct 25
2
Philips Semiconductors
Product specication
1000 MHz, 18.5 dB gain push-pull amplier
BGY1085A
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures
excellent reliability.
DESCRIPTION
Hybrid high amplifier module for
CATV systems operating over a
frequency range of 40 to 1000 MHz
at a supply voltage of +24 V (DC).
PINNING - SOT115J
PIN
DESCRIPTION
1
input
2
common
3
common
5+VB
7
common
8
common
9
output
Fig.1 Simplified outline.
fpage
7
8
9
2
35
1
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 50 MHz
18
19
dB
f = 1000 MHz
18.5
dB
Itot
total current consumption (DC) VB =24V
240
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Vi
RF input voltage
65
dBmV
Tstg
storage temperature
40
+100
°C
Tmb
operating mounting base temperature
20
+100
°C
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