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參數(shù)資料
| 型號： | 934019190112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 61K |
| 代理商： | 934019190112 |
2001 Oct 22
5
Philips Semiconductors
Product specication
860 MHz, 18.5 dB push-pull amplier
BGY885A
Table 3
Bandwidth 40 to 600 MHz; VB = 24 V; Tmb =30 °C; ZS =ZL =75
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 541.25 MHz; Vq = 44 dBmV;
measured at fp +fq = 596.5 MHz.
2. Measured according to DIN45004B:
fp = 590.25 MHz; Vp =Vo;
fq = 597.25 MHz; Vq = Vo 6 dB;
fr = 599.25 MHz; Vr =Vo 6 dB;
measured at fp +fq fr = 588.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 50 MHz
18
18.5
19
dB
f = 600 MHz
18.5
dB
SL
slope cable equivalent
f = 40 to 600 MHz
0
1.5
dB
FL
atness of frequency response
f = 40 to 600 MHz
±0.3
dB
S11
input return losses
f = 40 to 80 MHz
20
31
dB
f = 80 to 160 MHz
18.5
30
dB
f = 160 to 320 MHz
17
27.5
dB
f = 320 to 600 MHz
16
25
dB
S22
output return losses
f = 40 to 80 MHz
20
29
dB
f = 80 to 160 MHz
18.5
27.5
dB
f = 160 to 320 MHz
17
24
dB
f = 320 to 600 MHz
16
21
dB
S21
phase response
f = 50 MHz
45
+45
deg
CTB
composite triple beat
85 channels at; Vo = 44 dBmV;
measured at 595.25 MHz
60
57
dB
Xmod
cross modulation
85 channels at; Vo = 44 dBmV;
measured at 55.25 MHz
60.5 59
dB
CSO
composite second order
distortion
85 channels at; Vo = 44 dBmV;
measured at 596.5 MHz
64.5 58
dB
d2
second order distortion
note 1
79
70
dB
Vo
output voltage
dim = 60 dB; note 2
61
64.5
dBmV
F
noise gure
see Table 1
dB
Itot
total current consumption (DC)
note 3
225
240
mA
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