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參數(shù)資料
| 型號(hào)： | 934018860215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-61B, 4 PIN |
| 文件頁(yè)數(shù)： | 13/16頁(yè) |
| 文件大?。?/td> | 125K |
| 代理商： | 934018860215 |
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2000 May 23
6
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFG540; BFG540/X;
BFG540/XR
Fig.7 Gain as a function of collector current.
VCE = 8 V; f = 900 MHz.
MSG = maximum stable gain; Gmax = maximum available gain;
GUM = maximum unilateral power gain.
handbook, halfpage
020
IC (mA)
40
60
25
0
20
15
gain
(dB)
10
5
MRA752
GUM
Gmax
MSG
Fig.8 Gain as a function of collector current.
VCE = 8 V; f = 2 GHz.
Gmax = maximum available gain;
GUM = maximum unilateral power gain.
handbook, halfpage
020
IC (mA)
40
60
25
0
20
15
gain
(dB)
10
5
MRA753
GUM
Gmax
Fig.9 Gain as a function of frequency.
IC = 10 mA; VCE =8V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available gain.
handbook, halfpage
50
gain
(dB)
0
10
MRA754
10
2
103
10
4
10
20
30
f (MHz)
40
MSG
GUM
Gmax
Fig.10 Gain as a function of frequency.
handbook, halfpage
50
gain
(dB)
0
10
MRA755
10
2
103
10
4
10
20
30
f (MHz)
40
MSG
GUM
Gmax
IC = 40 mA; VCE =8V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available gain.
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