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參數(shù)資料
| 型號(hào)： | 934018810235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 11/13頁 |
| 文件大?。?/td> | 146K |
| 代理商： | 934018810235 |
September 1995
7
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
Fig.11 Intermodulation distortion as a function of
collector current.
handbook, halfpage
050
20
70
60
50
40
30
10
20
30
dim
(dB)
IC (mA)
40
MEA975
Fig.12 Second order intermodulation distortion as
a function of collector current.
handbook, halfpage
050
20
70
60
50
40
30
10
20
30
d2
(dB)
IC (mA)
40
MEA974
Fig.13 Minimum noise figure and associated
available gain as functions of collector
current.
V CE = 6 V; Tamb =25 °C.
handbook, halfpage
5
0
1
2
5
0
5
10
Gass
(dB)
15
20
3
Fmin
(dB)
IC (mA)
4
MRA682
1
102
10
2000 MHz
1000 MHz
2000 MHz
1000 MHz
f = 900 MHz
Gass
Fmin
900 MHz
500 MHz
Fig.14 Minimum noise figure and associated
available gain as functions of frequency.
VCE = 6 V; Tamb =25 °C.
handbook, halfpage
5
0
1
2
5
0
5
10
Gass
(dB)
15
20
3
Fmin
(dB)
f (MHz)
4
MRA683
102
104
103
Gass
5 mA
Fmin
20 mA
IC = 5 mA
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