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參數(shù)資料
| 型號(hào)： | 934018810215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 9/13頁(yè) |
| 文件大?。?/td> | 146K |
| 代理商： | 934018810215 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)當(dāng)前第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)
September 1995
5
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
Fig.3 Power derating curve.
handbook, halfpage
0
50
100
200
400
300
100
0
200
150
MRA670-1
Ptot
(mW)
Ts (
oC)
Fig.4
DC current gain as a function of collector
current.
VCE = 6 V; Tj =25 °C.
handbook, halfpage
0
250
50
100
150
200
MRA671
102
101
110
102
hFE
IC (mA)
Fig.5
Feedback capacitance as a function of
collector-base voltage.
IC = 0; f = 1 MHz.
handbook, halfpage
0
0.6
0.4
0.2
0
48
12
MRA672
Cre
(pF)
VCB (V)
Fig.6
Transition frequency as a function of
collector current.
f = 1 GHz; Tamb =25 °C.
handbook, halfpage
12
0
4
8
fT
(GHz)
IC (mA)
MRA673
101
110
102
VCE = 3 V
VCE = 6 V
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