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參數(shù)資料
| 型號： | 934018800215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 7/13頁 |
| 文件大小： | 146K |
| 代理商： | 934018800215 |
September 1995
3
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
15
V
VEBO
emitter-base voltage
open collector
2.5
V
IC
DC collector current
70
mA
Ptot
total power dissipation
up to Ts = 88 °C; note 1
300
mW
Tstg
storage temperature
65
150
°C
Tj
junction temperature
175
°C
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts =88 °C; note 1
290 K/W
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