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參數(shù)資料
| 型號： | 934018790215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 127K |
| 代理商： | 934018790215 |
September 1995
4
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFR520
CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2. IC = 20 mA; VCE =6 V; RL =50 ;Tamb =25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at f(2pq) = 898 MHz and f(2qp) = 904 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 6 V
50
nA
hFE
DC current gain
IC = 20 mA; VCE = 6 V
60
120
250
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
1
pF
Cc
collector capacitance
IE =ie = 0; VCB = 6 V; f = 1 MHz
0.5
pF
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
0.4
pF
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz
9
GHz
GUM
maximum unilateral
power gain (note 1)
IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
15
dB
IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
9
dB
S212
insertion power gain
IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
13
14
dB
F
noise gure
Γ
s = Γopt;IC = 5 mA; VCE = 6 V;
Tamb =25 °C; f = 900 MHz
1.1
1.6
dB
Γs = Γopt;IC = 20 mA; VCE = 6 V;
Tamb =25 °C; f = 900 MHz
1.6
2.1
dB
Γ
s = Γopt;IC = 5 mA; VCE = 6 V;
Tamb =25 °C; f = 2 GHz
1.9
dB
PL1
output power at 1 dB gain
compression
IC = 20 mA; VCE =6 V; RL =50 ;
Tamb =25 °C; f = 900 MHz
17
dBm
ITO
third order intercept point
note 2
26
dBm
G
UM
10
S
21
2
1S
11
2
–
1S
22
2
–
--------------------------------------------------------------
dB.
log
=
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