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參數(shù)資料
| 型號： | 934018770235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 11/16頁 |
| 文件大?。?/td> | 159K |
| 代理商： | 934018770235 |
1998 Oct 02
4
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistors
BFG505; BFG505/X
CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2. VCE = 6 V; IC = 5 mA; RL =50 ; Tamb =25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at 2fp fq = 898 MHz and 2fq fp = 904 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
VCB =6V; IE =0
50
nA
hFE
DC current gain
IC = 5 mA; VCE = 6 V; see Fig.3
60
120
250
Ce
emitter capacitance
IC =ic =0 VEB = 0.5 V; f = 1 MHz
0.4
pF
Cc
collector capacitance
VCB =6V; IE =ie = 0; f = 1 MHz
0.3
pF
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz; see Fig.4
0.2
pF
fT
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz;
see Fig.5
9
GHz
GUM
maximum unilateral
power gain; note 1
IC = 5 mA; VCE =6V;
Tamb =25 °C; f = 900 MHz
20
dB
Ic = 5 mA; VCE =6V;
Tamb =25 °C; f = 2 GHz
13
dB
S
21
2
insertion power gain
Ic = 5 mA; VCE =6V;
Tamb =25 °C; f = 900 MHz
16
17
dB
F
noise gure
Γ
s = Γopt; IC = 1.25 mA; VCE =6V;
Tamb =25 °C; f = 900 MHz
1.2
1.7
dB
Γs = Γopt; IC = 5 mA; VCE =6V;
Tamb =25 °C; f = 900 MHz
1.6
2.1
dB
Γ
s = Γopt; IC = 1.25 mA; VCE =6V;
Tamb =25 °C; f = 2 GHz
1.9
dB
PL1
output power at 1 dB gain
compression
IC = 5 mA; VCE =6V; RL =50 ;
Tamb =25 °C; f = 900 MHz
4
dBm
ITO
third order intercept point
note 2
10
dBm
G
UM
10
S
21
2
1S
11
2
–
() 1S
22
2
–
()
--------------------------------------------------------------
dB.
log
=
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