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參數(shù)資料
| 型號(hào)： | 934018770215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 159K |
| 代理商： | 934018770215 |
1998 Oct 02
2
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistors
BFG505; BFG505/X
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.
APPLICATIONS
RF front end applications in the GHz range, such as
analog and digital cellular telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar detectors, pagers and
satellite TV tuners (SATV).
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
MARKING
TYPE NUMBER
CODE
BFG505
N33
BFG505/X
N39
PINNING
PIN
DESCRIPTION
BFG505
BFG505/X
1
collector
2
base
emitter
3
emitter
base
4
emitter
Fig.1 Simplified outline SOT143B.
handbook, 2 columns
Top view
MSB014
12
3
4
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCES
collector-emitter voltage RBE =0
15
V
IC
collector current (DC)
18
mA
Ptot
total power dissipation
Ts ≤ 130 °C
150
mW
hFE
DC current gain
VCE =6V; IC = 5 mA
60
120
250
Cre
feedback capacitance
VCB =6V; IC =ic = 0; f = 1 MHz
0.2
pF
fT
transition frequency
VCE =6V; IC = 5 mA; f = 1 GHz
9
GHz
UM
maximum unilateral
power gain
VCE =6V; IC = 5 mA;
Tamb =25 °C; f = 900 MHz
20
dB
VCE =6V; IC = 5 mA;
Tamb =25 °C; f = 2 GHz
13
dB
S
21
2
insertion power gain
VCE =6V; Ic = 5 mA;
Tamb =25 °C; f = 900 MHz
16
17
dB
F
noise gure
Γs = Γopt;VCE =6V; Ic = 1.25 mA;
Tamb =25 °C; f = 900 MHz
1.2
1.7
dB
Γ
s = Γopt;VCE =6V; Ic = 5 mA;
Tamb =25 °C; f = 900 MHz
1.6
2.1
dB
Γ
s = Γopt; VCE =6V; Ic = 1.25 mA;
Tamb =25 °C; f = 2 GHz
1.9
dB
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