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參數(shù)資料
| 型號(hào)： | 934018760215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 159K |
| 代理商： | 934018760215 |
1998 Oct 02
5
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistors
BFG505; BFG505/X
Fig.3
DC current gain as a function of collector
current.
VCE =6V.
handbook, halfpage
0
250
50
100
150
hFE
200
MRA639
103
102
101
110
IC (mA)
102
Fig.4
Feedback capacitance as a function of
collector-base voltage.
IC = 0; f = 1 MHz.
handbook, halfpage
02
10
0.4
0.3
0.1
0
0.2
Cre
(pF)
46
8
VCB (V)
MRA640
Fig.5
Transition frequency as a function of
collector current.
Tamb =25 °C; f = 1 GHz.
handbook, halfpage
12
0
4
8
fT
(GHz)
IC (mA)
MRA641
101
110
102
VCE = 6 V
VCE = 3 V
Fig.6 Gain as a function of collector current.
handbook, halfpage
04
IC (mA)
812
25
0
20
MSG
GUM
15
gain
(dB)
10
5
MRA642
VCE = 6 V; f = 900 MHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
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