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參數(shù)資料
| 型號(hào)： | 934018750115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 0.375 A, 240 V, 7.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 934018750115 |
2001 May 18
3
Philips Semiconductors
Product specication
N-channel enhancement mode
vertical D-MOS transistor
BSP89
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum
6cm2.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient; note 1
83.3
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
ID =10 A; VGS = 0
240
V
IDSS
drain-source leakage current
VDS = 60 V; VGS =0
200
nA
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0
100
nA
VGSth
gate-source threshold voltage
ID = 1 mA; VGS =VDS
0.8
2V
RDSon
drain-source on-state resistance
ID = 340 mA; VGS =10V
2.8
5
ID = 340 mA; VGS = 4.5 V
7.5
Y
fs
transfer admittance
ID = 340 mA; VDS = 25 V
140
600
mS
Ciss
input capacitance
VDS = 25 V; VGS = 0; f = 1 MHz
100
120
pF
Coss
output capacitance
VDS = 25 V; VGS = 0; f = 1 MHz
20
30
pF
Crss
reverse transfer capacitance
VDS = 25 V; VGS = 0; f = 1 MHz
10
15
pF
Switching times (see Figs 3 and 4)
ton
turn-on time
ID = 250 mA; VDD =50V;
VGS = 0 to 10 V
610
ns
toff
turn-off time
ID = 250 mA; VDD =50V;
VGS = 0 to 10 V
47
60
ns
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