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參數(shù)資料
| 型號(hào)： | 934018740215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 120K |
| 代理商： | 934018740215 |
September 1995
2
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFR505
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
DESCRIPTION
The BFR505 is an npn silicon planar
epitaxial transistor, intended for
applications in the RF frontend in
wideband applications in the GHz
range, such as analog and digital
cellular telephones, cordless
telephones (CT1, CT2, DECT, etc.),
radar detectors, pagers and satellite
TV tuners (SATV).
The transistor is encapsulated in a
plastic SOT23 envelope.
PINNING
PIN
DESCRIPTION
Code: N30
1
base
2
emitter
3
collector
Fig.1 SOT23.
fpage
MSB003
Top view
12
3
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCES
collector-emitter voltage
RBE =0
15
V
IC
DC collector current
18
mA
Ptot
total power dissipation
up to Ts = 135 °C; note 1
150
mW
hFE
DC current gain
IC = 5 mA; VCE = 6 V
60
120
250
Cre
feedback capacitance
IC =ic = 0; VCB = 6 V; f = 1 MHz
0.3
pF
fT
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz
9
GHz
GUM
maximum unilateral
power gain
IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
17
dB
IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
10
dB
S
21
2
insertion power gain
IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
13
14
dB
F
noise gure
Γs = Γopt;IC = 1.25 mA; VCE = 6 V;
Tamb =25 °C; f = 900 MHz
1.2
1.7
dB
Γ
s = Γopt;IC = 5 mA; VCE = 6 V;
Tamb =25 °C; f = 900 MHz
1.6
2.1
dB
Γ
s = Γopt;IC = 1.25 mA; VCE = 6 V;
Tamb =25 °C; f = 2 GHz
1.9
dB
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