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參數(shù)資料
| 型號： | 934016730215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 96K |
| 代理商： | 934016730215 |
September 1995
2
Philips Semiconductors
Product specication
NPN 1 GHz wideband transistor
BF547
FEATURES
Feedback capacitance typ. 1 pF
Stable oscillator operation
High current gain
Good thermal stability.
APPLICATIONS
It is intended for VHF and UHF TV-tuner applications
and can be used as a mixer and/or oscillator.
DESCRIPTION
Low cost NPN transistor in a plastic SOT23 package.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 SOT23.
Marking code: E16.
handbook, halfpage
MSB003
Top view
12
3
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector pin.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCEO
collector-emitter voltage
open base
20
V
VCBO
collector-base voltage
open emitter
30
V
VEBO
emitter-base voltage
open collector
3V
ICM
peak collector current
50
mA
Ptot
total power dissipation
up to Ts =70 °C; note 1
300
mW
fT
transition frequency
IC = 15 mA; VCE 10 V; f = 500 MHz
1.2
1.6
GHz
Cre
feedback capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
1
pF
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCEO
collector-emitter voltage
open base
20
V
VCBO
collector-base voltage
open emitter
30
V
VEBO
emitter-base voltage
open collector
3V
ICM
peak collector current
50
mA
Ptot
total power dissipation
up to Ts =70 °C; note 1
300
mW
Tstg
storage temperature range
65
+150
°C
Tj
junction temperature
150
°C
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