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參數(shù)資料
| 型號： | 934015680112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 600 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 49K |
| 代理商： | 934015680112 |
2001 Nov 08
3
Philips Semiconductors
Product specication
600 MHz, 21.5 dB gain push-pull amplier
BGY687
CHARACTERISTICS
Bandwidth 40 to 600 MHz; Tcase =30 °C; ZS =ZL =75 .
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 541.25 MHz; Vq = 44 dBmV; measured at fp +fq = 596.5 MHz.
2. fp = 590.25 MHz; Vp =Vo; fq = 597.25 MHz; Vq =Vo 6 dB; fr = 599.25 MHz; Vr =Vo 6 dB; measured at
fp +fq fr = 588.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f =50 MHz
21
22
dB
f = 600 MHz
22
dB
SL
slope cable equivalent
f = 40 to 600 MHz
0.8
2.2
dB
FL
atness of frequency response
f = 40 to 600 MHz
±0.2
dB
S11
input return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
19
dB
f = 160 to 600 MHz
18
dB
S22
output return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
19
dB
f = 160 to 550 MHz
18
dB
f = 550 to 600 MHz
16
dB
S21
phase response
f = 50 MHz
45
+45
deg
CTB
composite triple beat
85 channels at;
Vo = 44 dBmV;
measured at 595.25 MHz
54
dB
Xmod
cross modulation
85 channels at;
Vo = 44 dBmV;
measured at 55.25 MHz
54
dB
CSO
composite second order distortion
85 channels at;
Vo = 44 dBmV;
measured at 596.5 MHz
52
dB
d2
second order distortion
note 1
66
dB
Vo
output voltage
dim = 60 dB; note 2
58
dBmV
NF
noise gure
f = 600 MHz
6.5
dB
Itot
total current consumption (DC)
note 3
240
mA
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