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參數(shù)資料
| 型號(hào)： | 934011900215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | 934011900215 |
September 1995
3
Philips Semiconductors
Product specication
PNP 1 GHz switching transistor
PMBTH81
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
20
V
VEBO
emitter-base voltage
open collector
3V
IC
collector current
40
mA
Ptot
total power dissipation
Ts =45 °C (note 1)
400
mW
Tstg
storage temperature
65
150
°C
Tj
junction temperature
150
°C
SYMBOL
PARAMETER
THERMAL RESISTANCE
Rth j-s
from junction to soldering point (note 1)
260 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC =10 A; IE =0
20
V
V(BR)CEO
collector-emitter breakdown
voltage
open base; IC = 1 mA; IB =0
20
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE =10 A; IC =0
3
V
VCE sat
collector-emitter saturation voltage
IC = 5 mA; IB = 0.5 mA
0.5
V
VBE on
base-emitter ON voltage
VCE = 10 V; IC = 5 mA
0.9
V
ICBO
collector-base cut-off current
VCB = 10 V; IE =0
100
nA
IEBO
emitter-base cut-off current
VEB = 2 V; IC =0
100
nA
hFE
DC current gain
VCE = 10 V; IC = 5 mA
60
Cce
collector-emitter capacitance
VCB = 10 V; IB = 0; f = 1 MHz
0.65
pF
Ccb
collector-base capacitance
VCB = 10 V; IE = 0; f = 1 MHz
0.85
pF
fT
transition frequency
VCE = 10 V; IC = 5 mA;
f = 100 MHz; Tamb =25 °C
600
MHz
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