參數(shù)資料
型號(hào): 934011870126
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, SPT, SC-43, 3 PIN
文件頁(yè)數(shù): 2/8頁(yè)
文件大小: 77K
代理商: 934011870126
1998 Aug 27
2
Philips Semiconductors
Product specication
NPN 1 GHz general purpose switching transistor
MPSH10
FEATURES
Low cost
High power gain.
DESCRIPTION
Silicon NPN general purpose
transistor in a SOT54 (TO-92)
package. PNP complement is the
MPSH81.
PINNING
PIN
DESCRIPTION
1
collector
2
emitter
3
base
Fig.1 SOT54.
page
1
3
2
MSB033
Marking code: PSH10.
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector lead, 4 mm from the body.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector lead, 4 mm from the body.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
30
V
VCEO
collector-emitter voltage
open base
25
V
VEBO
emitter-base voltage
open collector
3V
Ptot
total power dissipation
Ts =25 °C; note 1
1W
Tj
junction temperature
150
°C
hFE
DC current gain
VCE =10V; IC =4mA
60
Cre
collector-emitter feedback capacitance
VCB =10V; IE = 0; f = 1 MHz
0.7
pF
Crb
collector-base feedback capacitance
VCB =10V; IE = 0; f = 1 MHz
0.35
0.65
pF
fT
transition frequency
VCE =10V; IC = 4 mA;
f = 100 MHz; Tamb =25 °C
650
MHz
rbCc
collector-base time constant
VCE =10V; IC = 4 mA;
f = 100 MHz; Tamb =25 °C
9ps
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
30
V
VCEO
collector-emitter voltage
open base
25
V
VEBO
emitter-base voltage
open collector
3V
IC
collector current (DC)
40
mA
Ptot
total power dissipation
Ts =25 °C; note 1
1W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
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