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參數(shù)資料
| 型號(hào)： | 934009000215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 98K |
| 代理商： | 934009000215 |
1996 Sep 11
3
Philips Semiconductors
Product specication
N-channel silicon eld-effect transistors
PMBFJ308; PMBFJ309;
PMBFJ310
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
±25
V
VGSO
gate-source voltage
open drain
25
V
VGDO
gate-drain voltage
open source
25
V
IG
forward gate current (DC)
50
mA
Ptot
total power dissipation
up to Tamb =25 °C
250
mW
Tstg
storage temperature
65
150
°C
Tj
operating junction temperature
150
°C
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
400
300
100
0
200
150
MBB688
Ptot
(mW)
Tamb (°C)
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| 934011680127 | 制造商:NXP Semiconductors 功能描述:Diode Switching 150V 20A 3-Pin(3+Tab) TO-220AB Tube |
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