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參數(shù)資料
| 型號： | 934008980215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 98K |
| 代理商： | 934008980215 |
1996 Sep 11
5
Philips Semiconductors
Product specication
N-channel silicon eld-effect transistors
PMBFJ308; PMBFJ309;
PMBFJ310
DYNAMIC CHARACTERISTICS
Tj =25 °C; unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Cis
input capacitance
VDS =10V; VGS = 10 V; f = 1 MHz
3
5
pF
VDS =10V; VGS = 0; Tamb =25 °C6
pF
Crs
reverse transfer capacitance
VDS = 0; VGS = 10 V; f = 1 MHz
1.3
2.5
pF
gis
common source input
conductance
VDS =10V; ID = 10 mA; f = 100 MHz
200
S
VDS =10V; ID = 10 mA; f = 450 MHz
3
mS
gfs
common source transfer
conductance
VDS =10V; ID = 10 mA; f = 100 MHz
13
mS
VDS =10V; ID = 10 mA; f = 450 MHz
12
mS
grs
common source reverse
conductance
VDS =10V; ID = 10 mA; f = 100 MHz
30
S
VDS =10V; ID = 10 mA; f = 450 MHz
450
S
gos
common source output
conductance
VDS =10V; ID = 10 mA; f = 100 MHz
150
S
VDS =10V; ID = 10 mA; f = 450 MHz
400
S
Vn
equivalent input noise voltage
VDS =10V; ID = 10 mA; f = 100 Hz
6
nV/
√Hz
Fig.3
Drain current as a function of gate-source
cut-off voltage; typical values.
VDS = 10 V; Tj =25 °C.
handbook, halfpage
0
1
2
4
50
0
MCD220
3
40
30
20
10
IDSS
(mA)
VGSoff (V)
Fig.4
Forward transfer admittance as a function
of gate-source cut-off voltage; typical
values.
VDS = 10 V; ID = 10 mA; Tj =25 °C.
handbook, halfpage
0
2
4
8
MCD219
6
20
0
16
12
8
yfs
(mS)
4
VGSoff (V)
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