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參數(shù)資料
| 型號： | 934007250215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-61B, 4 PIN |
| 文件頁數(shù)： | 13/16頁 |
| 文件大?。?/td> | 133K |
| 代理商： | 934007250215 |
1998 Oct 02
6
Philips Semiconductors
Product specication
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
Fig.8 Gain as a function of frequency.
VCE = 8 V; IC = 5 mA.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
handbook, halfpage
50
0
10
MBB305
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
G UM
MSG
G max
Fig.9 Gain as a function of frequency.
VCE = 8 V; IC =15mA.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
handbook, halfpage
50
0
10
MBB306
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
G UM
MSG
G max
Fig.10 Gain as a function of frequency.
VCE = 8 V; IC = 30 mA.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
handbook, halfpage
50
0
10
MBB307
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
G UM
MSG
G max
Fig.11 Minimum noise figure as a function of
collector current.
VCE =8V.
handbook, halfpage
4
2
1
0
100
MBB308
10
1
3
F
(dB)
I
(mA)
C
f = 2 GHz
1 GHz
900 MHz
500 MHz
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