參數(shù)資料
型號： 934007240215
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-4
文件頁數(shù)： 10/16頁
文件大小： 133K
代理商： 934007240215
1998 Sep 23
3
Philips Semiconductors
Product specication
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
15
V
VCEO
collector-emitter voltage
open base
12
V
VEBO
emitter-base voltage
open collector
2V
IC
collector current (DC)
35
mA
Ptot
total power dissipation
Ts ≤ 85 °C; note 1
300
mW
Tstg
storage temperature range
65
+150
°C
Tj
junction operating temperature
175
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
note 1
290
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector leakage current
IE = 0; VCB =5V
50
nA
hFE
DC current gain
IC = 30 mA; VCE = 5 V
40
90
Cc
collector capacitance
IE =ie = 0; VCB =5V; f=1MHz
0.9
pF
Ce
emitter capacitance
IC =ic = 0; VEB =5V; f=1MHz
1.9
pF
Cre
feedback capacitance
IC =ic = 0; VCB =5V; f=1MHz
0.6
pF
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 500 MHz
4.5
6
GHz
GUM
maximum unilateral power
gain; note 1
IC = 30 mA; VCE =8V; Tamb =25 °C;
f = 1 GHz
16
dB
IC = 30 mA; VCE =8V; Tamb =25 °C;
f = 2 GHz
10
dB
F
noise gure
Γs = Γopt; IC = 5 mA; VCE =8V;
Tamb =25 °C; f = 1 GHz
1.7
dB
Γ
s = Γopt; IC = 5 mA; VCE =8V;
Tamb =25 °C; f = 2 GHz
2.3
dB
G
UM
10
S
21
2
1S
11
2
–
() 1S
22
2
–
()
-------------------------------------------------------------- dB.
log
=
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