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參數(shù)資料
| 型號： | 934005490112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | SOT-115D, 9 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 51K |
| 代理商： | 934005490112 |
2001 Nov 02
2
Philips Semiconductors
Product specication
860 MHz, 17 dB gain power doubler amplier
BGD885
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
DESCRIPTION
Hybrid amplifier module for CATV/MATV systems
operating over a frequency range of 40 to 860 MHz at a
voltage supply of 24 V (DC).
PINNING - SOT115D
PIN
DESCRIPTION
1
input
2, 3, 5, 6, 7
common
4
10 V, 200 mA supply terminal
8+VB
9
output
Fig.1 Simplified outline.
handbook, halfpage
7
8
9
24
6
35
1
Side view
MBK049
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 50 MHz
16.5
17.5
dB
Itot
total current consumption (DC)
VB = 24 V
450
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VB
DC supply voltage
26
V
Vi
RF input voltage
65
dBmV
Tstg
storage temperature
40
+100
°C
Tmb
operating mounting base temperature
20
+100
°C
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