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參數(shù)資料
| 型號： | 934005380115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 20 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, MPT3, SMD, UPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 43K |
| 代理商： | 934005380115 |
1999 Apr 08
3
Philips Semiconductors
Product specication
NPN medium power transistor
BC868
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
93
K/W
Rth j-s
thermal resistance from junction to soldering point
13
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =25V
100
nA
IE = 0; VCB =25V; Tj = 150 °C
10
A
IEBO
emitter cut-off current
IC = 0; VEB =5V
100
nA
hFE
DC current gain
IC = 5 mA; VCE =10V
50
IC = 500 mA; VCE = 1 V; see Fig.2
85
375
IC = 1 A; VCE = 1 V; see Fig.2
60
DC current gain
BC868-25
IC = 500 mA; VCE = 1 V; see Fig.2
160
375
VCEsat
collector-emitter saturation voltage IC = 1 A; IB = 100 mA
500
mV
VBE
base-emitter voltage
IC = 5 mA; VCE =10V
620
mV
IC = 1 A; VCE =1V
1V
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
40
MHz
DC current gain ratio of the
complementary pairs
IC = 0.5 A; VCE =1V
1.6
h
FE1
h
FE2
-----------
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