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參數(shù)資料
| 型號： | 934005280126 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封裝： | PLASTIC, SPT, SC-43, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 934005280126 |
July 1993
3
Philips Semiconductors
Product specication
N-channel silicon eld-effect transistors
J111; J112; J113
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
STATIC CHARACTERISTICS
Tj =25 °C unless otherwise specied
Drain-source voltage
±VDS
max.
40 V
Gate-source voltage
V
GSO
max.
40 V
Gate-drain voltage
V
GDO
max.
40 V
Gate forward current (DC)
IG
max.
50 mA
Total power dissipation
up to Tamb =50 °CPtot
max.
400 mW
Storage temperature range
Tstg
65 to + 150 °C
Junction temperature
Tj
max.
150
°C
From junction to ambient in free air
Rth j-a
=
250 K/W
J111
J112
J113
Gate reverse current
VGS = 15 V; VDS =0
IGSS
max.
1
nA
Drain cut-off current
VDS =5 V; VGS = 10 V
IDSX
max.
1
nA
Drain saturation current
VDS = 15 V; VGS =0
IDSS
min.
20
5
2
mA
Gate-source breakdown voltage
I
G =1 A; VDS =0
V(BR)GSS
min.
40
V
Gate-source cut-off voltage
VDS = 5 V; ID =1 A
VGS off
min.
3
1
0.5
V
max.
10
5
3
V
Drain-source on-state resistance
VDS = 0.1 V; VGS =0
RDSon
max.
30
50
100
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