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參數(shù)資料
| 型號： | 934004150115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 70K |
| 代理商： | 934004150115 |
April 1991
5
Philips Semiconductors
Product specication
UHF power transistor
BLT50
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common emitter class-B test circuit.
MODE OF
OPERATION
f (MHz)
VCE (V)
PL (W)
Gp (dB)
ηc (%)
c.w. narrow band
470
7.5
1.2
> 10
typ. 11.2
> 55
typ. 65
Fig.4
Gain and efficiency as functions of load
power, typical values.
VCE = 7.5 V; f = 470 MHz.
handbook, halfpage
16
12
4
0
8
MEA219
0.6
1.0
1.4
2.2
1.8
Gp
(dB)
Gp
PL (W)
80
60
40
100
η
(%)
Fig.5
Load power as a function of drive power,
typical values.
VCE = 7.5 V; f = 470 MHz.
handbook, halfpage
0
100
PD (mW)
PL
(W)
200
2
0
1
MEA220
Ruggedness in class-B operation
The BLT50 is capable of withstanding a load mismatch
corresponding to VSWR = 50:1 through all phases at rated
output power, up to a supply voltage of 9 V, f = 470 MHz
and Ts ≤ 60 °C, where Ts is the temperature at the
soldering point of the collector tab.
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