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參數(shù)資料
| 型號： | 934003860126 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封裝： | SPT, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 934003860126 |
1996 Jul 30
3
Philips Semiconductors
Product specication
N-channel silicon junction FETs
J108; J109; J110
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
STATIC CHARACTERISTICS
Tj =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
±25
V
VGSO
gate-source voltage
open drain
25
V
VGDO
gate-drain voltage
open source
25
V
IG
forward gate current (DC)
50
mA
Ptot
total power dissipation
up to Tamb =50 °C
400
mW
Tstg
storage temperature
65
150
°C
Tj
operating junction temperature
150
°C
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)GSS
gate-source breakdown voltage
IG = 1 A; VDS =0
25
V
VGSoff
gate-source cut-off voltage
ID =1 A; VDS =5V
V
J108
3
10
V
J109
2
6V
J110
0.5
4V
IDSS
drain current
VGS = 0; VDS =15V
J108
80
mA
J109
40
mA
J110
10
mA
IGSS
gate leakage current
VGS = 15 V; VDS =0
3nA
IDSX
drain-source cut-off current
VGS = 10 V; VDS =5V
3nA
RDSon
drain-source on-state resistance
VGS = 0; VDS = 100 mV
J108
8
J109
12
J110
18
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