參數(shù)資料
型號(hào): 934003460126
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝: PLASTIC, SPT, TO-92 VARIANT, SC-43, 3 PIN
文件頁數(shù): 11/13頁
文件大?。?/td> 263K
代理商: 934003460126
Philips Semiconductors
2N7000
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 03 — 19 May 2000
7 of 13
9397 750 07153
Philips Electronics N.V. 2000. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C and 150 °C; VDS ≥ ID × RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa34
0
0.5
1
1.5
2
2.5
3
-60
-20
20
60
100
140
180
typ
min
V
GS(th)
(V)
T
j
(
o
C)
03aa37
0
0.5
1
1.5
2
2.5
3
typ
min
I
D
(A)
V
GS
(V)
10-6
10-5
10-4
10-3
10-2
10-1
03aa07
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Tj = 25
o
C
150
o
C
VDS> IDX RDSon
g
fs
(S)
I
D
(A)
03aa09
1
10
100
0.1
1
10
100
Ciss
Coss
Crss
C
iss
, C
oss
C
rss
(pF)
V
DS
(V)
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2N7000,126 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
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