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參數(shù)資料
| 型號(hào)： | 934002660235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SC-61B, 4 PIN |
| 文件頁(yè)數(shù)： | 12/15頁(yè) |
| 文件大?。?/td> | 140K |
| 代理商： | 934002660235 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)當(dāng)前第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)
1996 Aug 01
6
Philips Semiconductors
Product specication
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
Fig.9
Forward transfer admittance as a function of
gate 1 voltage; typical values.
VDS = 8 V; Tamb =25 °C.
handbook, halfpage
11
30
0
6
12
18
24
MGE812
0
VG1 (V)
0 V
1 V
2 V
3 V
VG2-S = 4 V
|yfs|
(mS)
Fig.10 Output capacitance as a function of
drain-source voltage; typical values.
handbook, halfpage
414
1.5
1.0
1.1
1.2
1.3
1.4
MGE810
Cos
(pF)
6
8
10
12
VDS (V)
12 mA
10 mA
8 mA
VG2-S = 4 V; f = 1 MHz; Tamb =25 °C.
Fig.11 Gate 1 input capacitance as a function of
gate 1-source voltage; typical values.
handbook, halfpage
2.4
1.6
0.8
MGE809
0
2.1
1.9
1.7
2.3
1.5
1.3
Cis
(pF)
VG1-S (V)
VDS = 8 V; VG2-S = 4 V; f = 1 MHz; Tamb =25 °C.
Fig.12 Gate 1 input capacitance as a function of
gate 2-source voltage; typical values.
handbook, halfpage
64
2
Cis
(pF)
2
2.4
2.3
2.1
2.0
2.2
MBH479
0
VG2S (V)
VDS = 8 V; VG1-S = 0 V; f = 1 MHz; Tamb =25 °C.
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