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參數(shù)資料
| 型號(hào)： | 934002660215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SC-61B, 4 PIN |
| 文件頁數(shù)： | 11/15頁 |
| 文件大?。?/td> | 140K |
| 代理商： | 934002660215 |
1996 Aug 01
5
Philips Semiconductors
Product specication
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
Fig.5 Output characteristics; typical values.
handbook, halfpage
010
24
0
8
16
4
12
20
MGE813
2468
VDS (V)
ID
(mA)
0.4 V
0.3 V
0.2 V
0.1 V
0 V
0.5 V
0.4 V
0.3 V
0.2 V
0.1 V
VG1-S =
VG2-S = 4 V; Tamb =25 °C.
Fig.6 Transfer characteristics; typical values.
handbook, halfpage
11
24
0
8
16
4
12
20
MGE815
0
3 V
2 V
1 V
0 V
VG2-S = 4 V
VG1 (V)
ID
(mA)
VDS = 8 V; Tamb =25 °C.
Fig.7
Drain current as a function of gate 1
voltage; typical values.
handbook, halfpage
1600
400
800
1200
400
24
0
8
16
4
12
20
MGE814
0
max
typ
min
VG1 (mV)
ID
(mA)
VDS = 8 V; VG2-S = 4 V; Tamb =25 °C.
Fig.8
Forward transfer admittance as a function of
drain current; typical values.
handbook, halfpage
020
30
0
6
12
18
24
MGE811
16
12
8
4
ID (mA)
0.5 V
4 V
1 V
2 V
3 V
VG2-S = 0 V
|yfs|
(mS)
VDS = 8 V; Tamb =25 °C.
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